Display device

ABSTRACT

Discussed is a display device, including a substrate, a substrate electrode disposed on the substrate, a magnetic portion disposed and having a magnetic property on an upper surface of the substrate, and a plurality of light-emitting devices respectively disposed on the magnetic portion, wherein the each of the plurality of light-emitting devices includes a magnetic electrode forming an attractive force with the magnetic portion.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.16/968,065, filed on Aug. 6, 2020, which was filed as the National Stagefiling under 35 U.S.C. 371 of International Application No.PCT/KR2018/007641, filed on Jul. 5, 2018, which claims the benefit ofearlier filing date and right of priority to Korean Application No.10-2018-0015246, filed on Feb. 7, 2018, the entire contents of all theseapplications are all hereby expressly incorporated by reference into thepresent application.

BACKGROUND Field of the Invention

The present disclosure relates to a display device.

Discussion of the Related Art

Recently, a flat panel display device having excellent features such asthin and light designs, and low power consumption has been widelydeveloped and used in various fields.

A liquid crystal display (LCD) is widely used in various areas, fromsmall-sized portable terminals to large-sized televisions, because ofits high display quality and features such as thin and lightweightdesigns, and low power consumption.

An organic light emitting diode (OLED) display device (hereinafter,“OLED”) is a device that emits light. Electrons and holes (electronholes) are injected into an emissive (or light-emitting) layer formedbetween a cathode which is an electron injection electrode and an anodewhich is a hole injection electrode. As the electrons and holesrecombine, electron-hole pairs are created, forming an exciton. Theemissive layer emits light as the excited state decays. Such an OLEDdevice has advantages such as flexible nature, color capability, and lowpower consumption. More specifically, the OLED device can be formed evenon a flexible substrate such as plastic, has excellent color naturalnessdue to its characteristics of self-emission and can be driven at a lowvoltage (less than 10V).

However, a liquid crystal displays (LCD) has some drawbacks, such as anot-so-fast response time and high energy consumption as it lowersefficiency of backlight unit with high efficiency. In the case of anorganic light emitting diode (OLED), organics have much shorterlifetimes of up to around 2 years as they are vulnerable to reliability,and have low mass-production yield.

In order to obviate these problems, a new display device in which microLEDs are aligned in each pixel region (or area) has been developed.

However, in a large display device using such micro LEDs, there is adifficulty in aligning each of the micro LEDs to a lower wiring on whichthe respective pixel regions are located, due to their small size.

In the related art, micro LEDs are self-aligned to a lower wiring by acapillary force. However, as the capillary force is too weak, apossibility of self-alignment is low. As a result, many micro LEDs arewasted, which leads to a decrease in yield.

Further, in the related art, one micro LED should be aligned in onepixel region, but a plurality of micro LEDs may be arranged in one pixelregion.

SUMMARY OF THE DISCLOSURE

An aspect of the present disclosure is to provide a display devicehaving a plurality of light-emitting devices aligned on a substrate inan accurate and efficient manner.

Embodiments disclosed herein provide a display device that may include alower substrate on which a lower electrode is disposed, a flat layerdisposed on the lower substrate and having a plurality of holes, aplurality of light-emitting devices disposed in each of the plurality ofholes, a magnetic portion disposed on the lower substrate and havingmagnetic properties, and a reaction portion disposed at each of thelight-emitting devices and forming an attractive force with the magneticportion. A magnetization direction of the magnetic portion may beperpendicular to the lower substrate.

In one embodiment, the magnetic portion may be made of a ferromagneticmaterial, and the reaction portion may be made of a paramagneticmaterial.

In one embodiment, each of the light-emitting devices may include afirst electrode electrically connected to the lower electrode and havinga plurality of layers, a first conductive semiconductor layer disposedon the first electrode, an active layer disposed on the first conductivesemiconductor layer, and a second conductive semiconductor layerdisposed on the active layer. The reaction portion may be any one of theplurality of layers constituting the first electrode.

In one embodiment, the first electrode may include a first metal layerin contact with the first conductive semiconductor layer, and a secondmetal layer in contact with the lower electrode. The reaction portionmay be disposed between the first electrode layer and the secondelectrode layer.

In one embodiment, the reaction portion may be made of any one of Ni,Fe, Mo, and Co, or an Ni-Mo—Fe alloy or an Ni—Cr-Mo—Fe alloy.

In one embodiment, resistivity of the first and second metal layers maybe less than resistivity of the reaction portion.

In one embodiment, the lower electrode may include a plurality oflayers, and the magnetic portion may be any one of the plurality oflayers constituting the lower electrode.

In one embodiment, the magnetic portion may be made of an Sm—Co alloy.

In one embodiment, a thickness of the magnetic portion may be 20 to 1000nm.

In one embodiment, the present disclosure may further include a flatlayer covering the lower substrate and having a plurality of holes, andthe magnetic portion may be disposed to overlap a corresponding hole ofthe plurality of holes.

The embodiments of the present disclosure may provide at least one ormore of the following benefits or advantages. A possibility that two ormore light-emitting devices are arranged in one pixel region may bereduced due to mating (or matching) of a light-emitting structure and asubstrate.

A defective or improper electrical connection between a light-emittingdevice and a lower wiring may be reduced even when the light-emittingstructure is rotated on an axis perpendicular to a lower substrate dueto a shape of the light-emitting structure.

In addition, a magnetic portion and a reaction portion are provided onthe lower substrate and the light-emitting device, thereby increasing apossibility of proper alignment of the light-emitting device using acapillary force and a magnetic force.

Also, a high-speed screen may be implemented with a fast response speedby disposing an inorganic light-emitting device in a pixel region.

Further, a separate backlight unit is not required, thereby providingexcellent luminance and high efficiency.

Moreover, the light-emitting device is an inorganic material, which isadvantageous in terms of a long lifespan.

Furthermore, the light-emitting devices may be disposed in the unit ofpixels, making it suitable to be implemented as an active type.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a display device according to afirst embodiment of the present disclosure;

FIG. 2 is a planar view of the display device according to the firstembodiment illustrated in FIG. 1 ;

FIG. 3 is a planar view of a lower substrate according to the firstembodiment of the present disclosure;

FIG. 4 is a cross-sectional view taken along line “A-A” of the lowersubstrate illustrated in FIG. 3 ;

FIG. 5 is a cross-sectional view of a light-emitting device according tothe first embodiment of the present disclosure;

FIG. 6 is a planar view of the light-emitting device according to thefirst embodiment of the present disclosure,

FIGS. 7A and 7B are views illustrating modified examples of positioningpartition walls according to the first embodiment of the presentdisclosure;

FIGS. 8A and 8B are views illustrating modified examples of thelight-emitting device according to the first embodiment of the presentdisclosure;

FIGS. 9A to 9D are views illustrating a method of fabricating thedisplay device according to the first embodiment of the presentdisclosure;

FIG. 10 is a cross-sectional view of a display device according to asecond embodiment of the present disclosure;

FIG. 11 is a planar view of a lower substrate according to the secondembodiment of the present disclosure;

FIG. 12 is a cross-sectional view of a light-emitting device accordingto the second embodiment of the present disclosure;

FIG. 13 is a cross-sectional view of a display device according to athird embodiment of the present disclosure;

FIG. 14A is a cross-sectional view of a display device according to afourth embodiment of the present disclosure;

FIG. 14B is a cross-sectional view of a light-emitting device accordingto the fourth embodiment of the present disclosure;

FIGS. 15A to 15C are views illustrating a method of fabricating thedisplay device according to the second embodiment of the presentdisclosure;

FIG. 16 is a cross-sectional view of a display device according to thepresent disclosure;

FIG. 17 is a cross-sectional view of a lower wiring according to thepresent disclosure;

FIG. 18 is a cross-sectional view of a light-emitting device accordingto the present disclosure;

FIG. 19 is a bottom view of the light-emitting device according to thepresent disclosure;

FIGS. 20A to 20C are cross-sectional views illustrating a method offabricating the display device according to the present disclosure; and

FIG. 21 is a conceptual view illustrating a transfer process using holeshaving different shapes.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The advantages and features of the present disclosure will become betterunderstood with reference to the following detailed description ofembodiments taken in conjunction with the accompanying drawings.Although preferred embodiments have been depicted and described indetail herein, it will be apparent to those skilled in the relevant artthat various modifications, additions, substitutions and the like can bemade without departing from the spirit of the disclosure, and these are,therefore, considered to be within the scope of the disclosure, asdefined in the following claims. Like reference numerals refer to likecomponents throughout the specification.

Spatially relative terms, such as “beneath”, “below”, “lower”, “above”,“upper”, and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the drawings. It will be understood thatthe spatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, term such as “below” can encompass both anorientation of above and below. The device may be otherwise oriented atother orientations, and the spatially relative descriptors used hereinare interpreted accordingly.

In will be understood that the terminology used herein is for thepurpose of describing the embodiments herein and is not intended tolimit the present disclosure. A singular representation may include aplural representation as far as it represents a definitely differentmeaning from the context. Terms such as “comprises” and/or “comprising”used herein should be understood that they are intended to indicate theexistence of a feature, a number, a step, a constituent element, acomponent or a combination thereof disclosed in the specification, andit may also be understood that the existence or additional possibilityof one or more other features, numbers, steps, constituent elements,components or combinations thereof are not excluded in advance.

In the drawings, thickness or dimensions of each layer are exaggerated,omitted, or schematically illustrated for the sake of convenience andclarity. In addition, dimensions of constituent components and areas donot entirely reflect the actual dimensions and areas.

In addition, angles and directions mentioned for the purpose ofdescribing a structure of a display device in the embodiments disclosedherein are based on those illustrated in the drawings. In describing thestructures constituting the display device in the specification, ifreference points and positional relationships with respect to angles arenot explicitly referred to, reference is made to the related drawings.

Hereinafter, the embodiments will be described in more detail withreference to the drawings.

FIG. 1 is a cross-sectional view of a display device according to afirst embodiment of the present disclosure, FIG. 2 is a planar view ofthe display device according to the first embodiment illustrated in FIG.1 , FIG. 3 is planar view of a lower substrate according to the firstembodiment of the present disclosure, and FIG. 4 is a cross-sectionalview taken along line “A-A” of the lower substrate illustrated in FIG. 3.

Referring to FIGS. 1 to 4 , a display device 1 according to the firstembodiment includes a lower substrate 10 on which lower wiring 11 isdisposed, and at least two light-emitting devices (or elements) 100 eachhaving a first electrode 121 electrically connected to the lower wiring11 and a light-emitting structure 110 configured to generate light.

In addition, the display device 1 according to the first embodimentfurther includes a second electrode 122 located on a second conductivesemiconductor layer 113, an upper wiring 20 electrically connected tothe second electrode 122, and a color substrate 30 disposed on thelight-emitting device 100 to convert a wavelength of light generatedfrom the light-emitting device 100.

The lower substrate 10 may be implemented as a film made of aninsulating material. For example, the lower substrate 10 may be made ofa transparent glass material, or may be made of a transparent plastic ora polymer film having high flexibility.

The lower wiring 11 is disposed on the lower substrate 10. The lowerwiring 11 is electrically connected to the light-emitting device 100 tosupply driving power to the light-emitting device 100. The lower wiring11 located on the lower substrate 10 is provided at a position thatcorresponds to the light-emitting device 100. More specifically, thelower wiring 11 is disposed in a line shape on a plane (or flatsurface), as shown in FIG. 3 , so as to supply driving power to aplurality of light-emitting devices 100. The light-emitting devices 100are arranged with a constant pitch on the lower wiring 11 that isdisposed in the line shape. Alternatively, the lower wiring 11 isdisposed in a dot shape on a plane.

The lower wiring 11 may include a conductive material, and include ametal selected from, such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn,Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu, and WTi, or an alloythereof, and may be formed as a single layer or multiple layers.Further, the lower wiring 11 may be made of a light transmissivematerial that includes at least one of ITO, IZO (In—ZnO), GZO (Ga—ZnO),AZO (Al—ZnO), AGZO (Al—Ga ZnO), IGZO (In—Ga ZnO), IrO_(x), RuO_(x),RuO_(x)/ITO, Ni/IrO_(x)/Au, and Ni/IrO_(x)/Au/ITO.

The lower wiring 11 is formed such that the conductive materialdescribed above is coated or deposited on the lower substrate 10 byusing a deposition method such as sputtering. Then, a metal layer may bepatterned by a photolithography process and an etching process using amask.

The lower wirings 11 may be arranged to intersect each other and aswitching element (not shown) may be located at a point of theintersection. The lower wiring 11 may be disposed in consideration of apixel region (or area) P, which will be described hereinafter.

The lower wiring 11 is electrically connected to the first electrode 121of the light-emitting device 100, and a metal bonding layer 13 isprovided to reinforce adhesion between the lower wiring 11 and the firstelectrode 121.

The metal bonding layer 13 is disposed on the lower wiring 11 tocorrespond to each of the pixel regions P in which the respectivelight-emitting devices 100 are located. The metal bonding layer 13 isused for joining the lower wiring 11 and the first electrode 121together.

In addition, the metal bonding layer 13 may be made of a material thatproduces a capillary force on the first electrode 121. The plurality oflight-emitting devices 100 is aligned on the lower wiring 11 tocorrespond to the respective pixel regions P by the capillary forceacting between the metal bonding layer 13 and the first electrode 121.

In detail, the lower substrate 10 on which the metal bonding layer 13 isdisposed is put into a solution containing a larger number oflight-emitting devices 100 than that of the pixel regions P whileapplying vibration. Then, the light-emitting devices 100 areself-aligned by the capillary force between the metal bonding layer 13and the first electrode 121.

When heat is applied to the metal bonding layer 13, the metal bondinglayer 13 is melted, allowing the first electrode 121 and the lowerwiring 11 to be joined together. The metal bonding layer 13 has amelting point temperature of 45° C. to 300° C. A metal solder having150° C. to 300° C. of melting point temperature is used to withstanddriving conditions of the display device and temperature ofpost-processes. Thus, self-alignment is performed at the melting pointtemperature of the metal bonding layer 13. More preferably, the meltingpoint temperature of the metal bonding layer 13 is lower than a meltingpoint temperature of the first electrode 121.

The metal bonding layer 13 includes a conductive material. For example,the metal bonding layer 13 may be at least one element of Sn, Ag, Cu,Pb, Al, Bi, Cd, Fe, In, Ni, Sb, Zn, Co, and Au, or a component of theseelements with eight-component systems or less. More preferably, themetal bonding layer 13 may be at least one element of Cu, Pb, Al, Fe andNi, or a component of these elements.

The metal bonding layer 13 is formed on the lower wiring 11 by using adeposition method such as sputtering. Then, the metal layer may bepatterned by a photolithography process and an etching process using amask.

When the metal bonding layer 13 is melted, the metal bonding layer 13disposed on the lower wiring 11 expands more than a set or predeterminedsize. As a result, two or more light-emitting devices 100 may be coupledto the metal bonding layer 13. In order to prevent this, a positioningpartition wall 12 is provided at an upper portion of the lower substrate10.

The positioning partition wall 12 defines a space in which the metalbonding layer 13 is accommodated. In addition, the positioning partitionwall 12 determines a position in which the first electrode 121 of thelight-emitting device 100 is aligned. The positioning partition wall 12serves as a wall that prevents the metal bonding layer 13 from expandingbeyond a predetermined size. In addition, the positioning partition wall12 holds the shape of the metal bonding layer 13. Accordingly, the metalbonding layer 13 has a shape corresponding to a shape of thelight-emitting device 100, thereby facilitating alignment of thelight-emitting device 100, and preventing two or more light-emittingdevices from being coupled to one metal bonding layer 13.

Moreover, a central region S1 of the light-emitting structure 110 isinserted in a space defined by the positioning partition wall 12. Thespace defined by the positioning partition wall 12 has a shape thatallows the central region S1 to be inserted. When the central region S1is inserted into the space defined by the positioning partition wall 12,the likelihood of proper (or successful) alignment of the light-emittingdevice 100 is increased. A center of the light-emitting device 100 isaligned with a center of the metal bonding layer 13 even though thelight-emitting device 100 is brought into contact with the metal bondinglayer 130 by a capillary force due to a mating (or matching) of thecentral region S1 with the positioning partition wall 12.

In more detail, the positioning partition wall 12 has a shape thataccommodates a part (or portion) of the lower wiring 11 and protrudesupward than the lower wiring 11. For example, as illustrated in FIG. 4 ,the positioning partition wall 12 may be a wall protruding upward fromthe lower substrate 10. Alternatively, the positioning partition wall 12may be recessed downward from an upper portion of the lower substrate10. However, considering arrangement of the lower wiring 11 on the lowersubstrate 10, the positioning partition wall 12 may have a wall shapeprotruding from the lower substrate 10.

In particular, referring to FIG. 3 , the positioning partition wall 12is disposed on the lower substrate 10 at a position corresponding toeach of the pixel regions P in which the respective light-emittingdevices 100 are to be located, so as to determine a region where thefirst electrode 121 and the metal bonding layer 13 are joined together.The metal bonding layer 13 is accommodated in a space defined by thepositioning partition wall 12 on a plane.

The positioning partition wall 12 has a shape of a closed space on aplane. The positioning partition wall 12 is disposed to surround themetal bonding layer 13 on a plane. The positioning partition wall 12 hasa ring shape on a plane.

More specifically, in order to prevent misalignment of thelight-emitting device 100, an inner space defined by the positioningpartition wall 12 is formed to correspond to the central region S1 ofthe light-emitting structure 110, which will be described hereinafter.The inner space defined by the positioning partition wall 12 has acircular shape. A diameter d1 of the inner space defined by thepositioning partition wall 12 is greater than a diameter d2 of thecentral region S1. The diameter d1 of the inner space defined by thepositioning partition wall 12 may correspond to 90% to 120% of thediameter d2 of the central region S1. As another example, thepositioning partition wall 12 is continuously (or consecutively)disposed on a boundary line that surrounds the central region S1, whenviewed from above.

The positioning partition wall 12 is made of a resin material havingelectrical insulation properties.

The upper wiring 20 supplies driving (or electric) power to thelight-emitting device 100. The upper wiring 20 supplies electric powerof opposite polarity to the lower wiring 11.

In detail, the upper wiring 20 is electrically connected to the secondelectrode 122 of the light-emitting device 100. The upper wiring 20 islocated on the second electrode 122. The upper wiring 20 is disposed toat least vertically overlap the second electrode 122. In addition, theupper wiring 20 is disposed in a line shape on a plane.

The upper wiring 20 may include a conductive material, and include ametal selected from, such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn,Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu, and WTi, or an alloythereof, and may be formed as a single layer or multiple layers. Morepreferably, the upper wiring 20 may be made of a material that transmitslight generated from the light-emitting device 100 located below. Forexample, the upper wiring 20 may include at least one of ITO, IZO(In—ZnO), GZO (Ga—ZnO), AZO (Al—ZnO), AGZO (Al—Ga ZnO), IGZO (In—GaZnO), IrO_(x), RuO_(x), RuO_(x)/ITO, Ni/IrO_(x)/Au, andNi/IrO_(x)/Au/ITO.

The upper wiring 20 is formed such that the conductive materialdescribed above is coated or deposited on the second electrode 122 usinga deposition method such as sputtering. Then, the metal layer may bepatterned via a photolithography process and an etching process using amask.

In order to arrange the upper wiring 20 having the line shape, a moldingmaterial 40 is filled in an air gap (or void) between each of thelight-emitting devices 100. An upper surface of the light-emittingdevice 100 is flattened (or planarized) by the molding material 40. Themolding material 40 is made of transparent silicone that transmitslight, for example.

Referring to FIG. 2 , the color substrate 30 is disposed on thelight-emitting device 100 so as to convert the wavelength of lightgenerated by the light-emitting device 100. In addition, one region ofthe color substrate 30 shields light, and another region transmitslight, so as to be divided into a plurality of pixel regions P andnon-pixel regions P′.

The plurality of pixel regions P may be arranged in a matrix type havingrows and columns. A black matrix 31 is disposed on the non-pixel regionsP′ of the color substrate 30 with a constant interval to define thepixel regions P.

For example, the color substrate 30 may include the black matrix 31 anda color filter 32.

The black matrix 31 is formed on the color substrate 30. The blackmatrix 31 divides the region of the color substrate 30 into a pluralityof pixel regions P where the color filters 32 are to be provided, andprevents light interference and external light reflection betweenadjacent pixel regions P.

A plurality of color filters 32 (R, G, B) is located at the pixelregions P that correspond to a space between the black matrices 31.

The color filters 32 are provided in the pixel regions P divided by theblack matrix 31 to be classified into red (R), green (G), and blue (B),so as to transmit red light, green light, and blue light, respectively.The red, green, and blue color filters 32 (R, G, and B) for representingcolors may be arranged in a stripe shape along respective columndirections.

The black matrix 31 may include a material that blocks light, forexample, a non-light transmitting synthetic resin.

The color filter 32 may be disposed to vertically overlap the pluralityof light-emitting devices 100 (see FIG. 1 ). Further, the black matrix31 may be disposed without vertically overlapping the plurality oflight-emitting devices 100. Accordingly, most of the light generatedfrom the light-emitting devices 100 is emitted to the outside throughthe color filter 32, thereby improving efficiency and brightness of thedisplay device 1.

The color filter 32 may include a phosphor that converts the wavelengthof light generated in the light-emitting devices 100. For example, atleast one phosphor may be selected according to a wavelength of light tobe realized (or achieved).

Such a phosphor may be one of a blue light emitting phosphor, ablue-green light emitting phosphor, a green light emitting phosphor, ayellow-green light emitting phosphor, a yellow light emitting phosphor,a yellow-red light emitting phosphor, an orange light emitting phosphor,and a red light emitting phosphor according to the wavelength of lightemitted from the light-emitting device 100.

In other words, the phosphor may be excited by light having first lightemitted from the light-emitting device 100 to generate second light.

For example, when the light-emitting device 100 is a blue light-emittingdiode and a phosphor is a yellow phosphor, the yellow phosphor may beexcited by blue light to emit yellow light.

Such phosphors may be known phosphors, such as YAG-based, TAG-based,sulfide-based, silicate-based, aluminate-based, nitride-based,carbide-based, nitridosilicate-based, borate-based, fluoride-based, andphosphate-based phosphors.

Alternatively, the color substrate 30 may not be provided, but each ofthe light-emitting devices 100 may be configured to emit red, green, andblue light instead. However, in this case, it may be difficult to aligneach of the light-emitting devices 100 in a manner of corresponding to acolor of the respective pixel region P.

FIG. 5 is a cross-sectional view of a light-emitting device according tothe first embodiment of the present disclosure, and FIG. 6 is a planarview of the light-emitting device according to the first embodiment ofthe present disclosure.

The plurality of light-emitting devices 100 is located at the lowerwiring 11 to correspond to the respective pixel regions P. In detail,the light-emitting devices 100 are aligned and adhered onto therespective metal bonding layers 13 located corresponding to each pixelregion P.

The light-emitting device 100 includes the first electrode 121, thesecond electrode 122, and the light-emitting structure 110 thatgenerates light.

The light-emitting device 100 may be an inorganic semiconductor selectedfrom semiconductor materials having a composition formula In_(x)Al_(y)Ga_(1-x-y)N (0=x=1, 0=y=1, 0=x+y=1).

A Liquid Crystal Display (LCD) has some drawbacks, for example, aresponse time is not fast, causing huge power consumption as it lowersefficiency of a backlight unit having high efficiency. Further, OrganicLight Emitting Diodes (OLEDs) have shorter lifetimes of up to around 2years, and have very low mass-production yield.

In this embodiment, a high-speed screen with a fast response speed maybe realized by disposing the inorganic light-emitting devices 100 in thepixel regions P. In addition, a backlight unit is not separatelyrequired, thereby achieving excellent luminance (or brightness) and highefficiency.

Further, the light-emitting device 100 is an inorganic material, andthereby to have a long lifespan. Moreover, the light-emitting devices100 may be arranged in the unit of pixels, making it suitable forimplementing as an active type.

The light-emitting device 100 may emit an ultraviolet ray (UV) or bluelight. In the case of light having a short wavelength, luminance isexcellent, thereby achieving a light of high luminance with a lowvoltage.

The light-emitting device 100 may be formed using a metal organicchemical vapor deposition (MOCVD), chemical vapor deposition (CVD),plasma chemical vapor deposition (PECVD), Molecular Beam Epitaxy (MBE),Hydride Vapor Phase Epitaxy (HVPE), sputtering, and the like, but themethod is not limited thereto.

For example, the light-emitting structure 110 includes a firstconductive semiconductor layer 111, an active layer 112 disposed on thefirst conductive semiconductor layer 111, and the second conductivesemiconductor layer 113 located on the active layer 112.

The first conductive semiconductor layer 111 may be formed of asemiconductor compound and be doped with a first conductive dopant. Forexample, the first conductive semiconductor layer 111 may be implementedas an n-type semiconductor layer to provide electrons to the activelayer 112. The first conductive semiconductor layer 111 may be selectedfrom semiconductor materials, such as GaN, AlN, AlGaN, InGaN, InN,InAlGaN, and AlInN, that have a composition formula ofIn_(x)Al_(y)Ga_(1-x-y)N (0=x=1, 0=y=1, 0=x+y=1), and may be doped with an-type dopant, such as Si, Ge, Sn, Se, and Te.

The active layer 112 may be disposed on the first conductivesemiconductor layer 111. The active layer 112 may have any one of asingle quantum well structure, a multiple quantum well structure, aquantum-wire structure, and a quantum dot structure by using a compoundsemiconductor material of Group 3 to 5 elements.

When the active layer 112 consists of a quantum well structure, it mayhave a single or multiple quantum well structure with a well layerhaving a composition formula of In_(x)Al_(y)Ga_(1-x-y)N (0=x=1, 0=y=1,0=x+y=1) and a barrier layer having a composition formula ofIn_(a)Al_(b)Ga_(1-a-b)N (0=a=1, 0=b=1, 0=a+b=1), for example. The welllayer may be formed of a material having a smaller band gap than thebarrier layer.

In addition, when the active layer 112 has a multiple quantum wellstructure, each of well layers (not shown) may have a different Incontent and a different band gap, which will be described hereinafterwith reference to FIG. 2 .

A conductive clad layer (not shown) may be formed on and/or beneath theactive layer 112. The conductive clad layer (not shown) may beimplemented as a semiconductor, and have a larger band gap than theactive layer 112. For example, the conductive clad layer (not shown) mayinclude AlGaN.

The second conductive semiconductor layer 113 may be formed of asemiconductor compound to inject holes into the active layer 112, and bedoped with a second conductive dopant. For example, the secondconductive semiconductor layer 113 may be implemented as a p-typesemiconductor layer. The second conductive semiconductor layer 113 maybe selected from semiconductor materials, such as GaN, AlN, AlGaN,InGaN, InN, InAlGaN, and AlInN, that have a composition formula ofIn_(x)Al_(y)Ga_(1-x-y)N (0=x=1, 0=y=1, 0=x+y=1), and may be doped with ap-type dopant such as Mg, Zn, Ca, Sr, and Ba.

Meanwhile, an intermediate layer (not shown) may be formed between theactive layer 112 and the second conductive semiconductor layer 113. Theintermediate layer (not shown) may prevent electrons, injected into theactive layer 112 from the first conductive semiconductor layer 111, fromflowing to the second conductive semiconductor layer 113 without beingrecombined with holes at the active layer 112 when a high current isapplied. The intermediate layer (not shown) has a relatively larger bandgap than the active layer 112, and thus the electrons injected from thefirst conductive semiconductor layer 111 may be prevented from beinginjected into the second conductive semiconductor layer 113 withoutbeing recombined with the holes at the active layer 112. Accordingly,the possibility of recombination of electrons and holes at the activelayer 112 may be increased and a leakage current may be prevented.

In addition, the first conductive semiconductor layer 111 may beimplemented as a p-type semiconductor layer, the second conductivesemiconductor layer 113 may be implemented as an n-type semiconductorlayer, and a third semiconductor layer (not shown) including an n-typeor a p-type semiconductor layer opposite to polarity of the secondconductive semiconductor layer 113 may be formed on the secondconductive semiconductor layer 113. Accordingly, the light-emittingdevice may have at least one of np, pn, npn, and pnp junctionstructures. The light-emitting device 100 of this embodiment isconfigured as a vertical type in which electrodes are formed at upperand lower portions of the light-emitting structure 110, the firstconductive semiconductor layer 111 is implemented as a p-typesemiconductor layer, and the second conductive semiconductor layer 113is implemented as an n-type semiconductor layer.

Meanwhile, the first electrode 121 electrically connected to the firstconductive semiconductor layer 111 may be disposed on the firstconductive semiconductor layer 111. For example, the first electrode 121may be formed at a lower portion of the first conductive semiconductorlayer 111. The first electrode 121 and the lower wiring 11 are adheredtogether by the metal bonding layer 13.

Further, the second electrode 122 electrically connected to the secondconductive semiconductor layer 113 may be disposed on the secondconductive semiconductor layer 113. More specifically, the secondelectrode 122 is located on the second conductive semiconductor layer113.

The first electrode 121 and the second electrode 122 may be formed by adeposition method such as sputtering. However, the present disclosure isnot limited thereto.

Meanwhile, the first electrode 121 and the second electrode 122 may bemade of a conductive material, and may include a metal selected from,such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W,Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu, and WTi, or an alloy thereof, and may beformed as a single layer or multiple layers. However, the presentdisclosure is not limited thereto. More preferably, the first electrode121 is made of any one element of Au, Pt, and Ag, or an alloy thereof.

In addition, a bonding layer (not shown) that joins the first electrode121 and the first conductive semiconductor layer 111 together is formedbetween the first electrode 121 and the first conductive semiconductorlayer 111. The bonding layer (not shown) may include any one of a PbSnalloy, an AuGe alloy, an AuBe alloy, an AuSn alloy, an SnIn alloy, and aPdIn alloy.

Moreover, the first electrode 121 may further include a reflective layer123 that is conductive and reflects light incident from the active layer112.

When light generated in the active layer 112 travels to the lowersubstrate 10, the light is reflected by the reflective layer 123 withoutbeing absorbed by the first electrode 121, thereby preventing a decreasein luminance and brightness, due to light absorbed by the firstelectrode 121.

The light-emitting structure 110 includes the central region S1 in whichthe first electrode 121 is located and the peripheral region S2 thatsurrounds the central region S1.

When viewed from the bottom, the central region S1 is disposed at amiddle of the light-emitting structure 110 and is located inside theperipheral region S2. The peripheral region S2 defines a closed spacefor accommodating the central region S1 therein.

The central region S1 and the peripheral region S2 may have stepdifferences. In detail, the central region S1 has a step that protrudesdownward from the peripheral region S2. An area where the firstelectrode 121 is located is smaller than a lower area of thelight-emitting structure 110, and the first electrode 121 is locatedinward from a lower edge of the light-emitting structure 110. Thisprevents a plurality of light-emitting devices 100 from being aligned inone pixel region P. In other words, even when side (or lateral) surfacesof the plurality of light-emitting devices 100 are in contact with eachother on a plane, a diameter d2 of the central region S1 in which thefirst electrode 121 is located is less than a width d3 of thelight-emitting structure 110, and the metal bonding layer 13 is formedto correspond to the first electrode 121, thereby lowering a possibilityof the plurality of light-emitting devices 100 coupled to one metalbonding layer 13.

The step between the central region S1 and the peripheral region S2 maybe formed by disposing a semiconductor layer beneath the light-emittingstructure 110, or by etching the peripheral region S2 of thelight-emitting structure 110 upward.

The step between a lower surface of the central region S1 and a lowersurface of the peripheral region S2 is not limited. The step between thelower surface of the central region S1 and the lower surface of theperipheral region S2 may be, preferably, 500 nm to 7000 nm. This isbecause if the step between the lower surface of the central region S1and the lower surface of the peripheral region S2 is less than 500 nm,the central region S1 is easily separated or displaced even wheninserted into the positioning partition wall 12, whereas the steptherebetween is greater than 7000 nm, efficiency of the light-emittingdevice 100 is reduced. Here, the first electrode 121 is disposed at thelower surface of the central region S1.

In more detail, at least a side (or lateral) surface of the firstconductive semiconductor layer 111 is exposed to a boundary between thecentral region S1 and the peripheral region S2. More preferably, atleast the side surface of the first conductive semiconductor layer 111,a side surface of the active layer 112 and a part (or portion) of a sidesurface of the second conductive semiconductor layer 113 are exposed tothe boundary between the central region S1 and the peripheral region S2.The central region S1 may be formed by etching the lower edge of thelight-emitting structure 110.

A planar width or diameter of the light-emitting structure 110 isgreater than a planar width or diameter of the central region S1. Theplanar width or diameter of the central region S1 may be, preferably,50% to 85% of those of the light-emitting structure 110. The width ofthe peripheral region S2 is equally formed along a circumference of thecentral region S1.

When viewed from the bottom, the light-emitting structure 110 has ashape of any one of a rectangular shape, a polygonal shape, and acircular shape. When the light-emitting structure 110 is denselydisposed on a plane, a shape with a high porosity is more suitable.Therefore, a planar shape of the light-emitting structure 110 may be ahexagonal or more polygonal shape, or a circular shape.

When viewed from the bottom, the central region S1 may have a shape ofany one of a rectangular shape, a polygonal shape, and a circular shape.The central region S1 may have a planar shape that corresponds to theplanar shape of the light-emitting structure 110, or have a differentplanar shape. However, in order to prevent the plurality oflight-emitting devices 100 from being arranged in one pixel region P,the planar shape of the central region S1 may be, preferably, the sameas the planar shape of the light-emitting structure 110. Accordingly, itis preferable that the central region S1 disposed at the center of thelower surface of the light-emitting structure 110 has a hexagonal ormore polygonal shape, or a circular shape.

A shape of the peripheral region S2 viewed from below is determined bythe shapes of the central region S1 and the light-emitting structure110. The peripheral region S2 has a ring shape when viewed from thebottom. The peripheral region S2 serves as a buffer for preventing anelectrode of the light-emitting device 100 located around the pixelregion P from being brought into contact with the metal bonding layer 13or the lower wiring 11 of the pixel region P.

In addition, the light-emitting device 100 further includes aninsulating layer 124. The insulating layer 124 prevents the lower wiring11 from being electrically connected to other layers, except the firstconductive semiconductor layer 111. In detail, the insulating layer 124covers a side surface of the light-emitting structure 110. Morespecifically, the insulating layer 124 is disposed to surround thecircumference of the central region S1 and the peripheral region S2, andis disposed at a lower portion of the peripheral region S2. Theinsulating layer 124 includes a resin material made of an electricallyinsulating material.

FIGS. 7A and 7B are views illustrating modified examples of thepositioning partition walls according to the first embodiment of thepresent disclosure.

Referring to FIG. 7A, the positioning partition wall 12 in FIG. 7A has adifferent shape to the positioning partition wall 12 of the firstembodiment. The positioning partition wall 12 according to the modifiedexample of FIG. 7A has a polygonal shape on a plane. In detail, theplanar shape of the positioning partition wall 12 is rectangular. Here,the central region S1 is also formed in a rectangular planar shape.

Referring to FIG. 7B, the positioning partition wall 12 in FIG. 7B has adifferent shape to the positioning partition wall 12 of the firstembodiment. The positioning partition wall 12 according to the modifiedexample of FIG. 7B is disposed on a boundary line surrounding thecentral region S1 in a non-continuous (or discontinuous) manner, whenviewed from above.

FIGS. 8A and 8B are views illustrating modified examples of thelight-emitting device according to the first embodiment of the presentdisclosure.

Referring to FIG. 8A, the light-emitting device 100 in FIG. 8A has adifferent shape to the light-emitting device 100 of the firstembodiment. The light-emitting structure 110 according to the modifiedexample of FIG. 8A has a polygonal shape on a plane. More specifically,the planar shape of the light-emitting structure 110 is rectangular.

In addition, the central region S1 has the rectangular planar shape thatcorresponds to the planar shape of the light-emitting structure 110.

Referring to FIG. 8B, the light-emitting device 100 in FIG. 8B has adifferent shape to the light-emitting device 100 according to the firstembodiment. In the modified example of FIG. 8B, the light-emittingstructure 110 has a rectangular shape on a plane, and the central regionS1 has a circular shape on a plane.

FIGS. 9A to 9D are views illustrating a method of fabricating thedisplay device according to the first embodiment of the presentdisclosure.

Referring to FIG. 9A, the lower substrate 10 having the lower wiring 11disposed thereon is prepared. The positioning partition wall 12 isformed on the lower substrate 10. The metal bonding layer 13 is locatedinside a space defined by the positioning partition wall 12.

Referring to FIGS. 9B and 9C, numerous light-emitting devices 100 arealigned with respective pixel regions P by a capillary force actingbetween the metal bonding layer 13 and the first electrode 121 of thelight-emitting device 100. In detail, the lower substrate 10 providedwith the metal bonding layer 13 is put into a container containing asolution with the numerous light-emitting devices 100, and vibration isapplied. In the solution, the light-emitting devices 100 are alignedwith the respective pixel regions P by the capillary force between themetal bonding layer 13 and the first electrode 121 of the light-emittingdevice 100. At this time, heat is applied to melt the metal bondinglayer 13. The melted metal boding layer 10 allows the first electrode121 to be adhered onto the lower wiring 11.

Here, the light-emitting device 100 is put into the solution in a statethat the first electrode 121 and the light-emitting structure 110 areonly formed. This is because when the second electrode 122 is formed, adefect occurs, namely, the second electrode 122 and the lower wiring 11are connected to each other.

Shapes of the positioning partition wall 12 and the central region S1may prevent two or more of the light-emitting devices 100 from beingaligned in one pixel region P. The central region S1 of thelight-emitting structure 110 may be easily inserted into the positioningpartition wall 12 even when the central region S1 has a circular shapeto allow the light-emitting structure 110 to be rotated.

Referring to FIG. 9D, the second electrode 122 is formed on thelight-emitting device 100. A molding material is filled in an air gap(or void) between the light-emitting devices 100 to be flattened. Then,the upper wiring 20 and the color substrate 30 are disposed on thelight-emitting device 100.

FIG. 10 is a cross-sectional view of a display device according to asecond embodiment of the present disclosure, FIG. 11 is a planar view ofa lower substrate according to the second embodiment of the presentdisclosure, and FIG. 12 is a cross-sectional view of a light-emittingdevice according to the second embodiment of the present disclosure.

Referring to FIGS. 10 to 12 , a display device 1A according to thesecond embodiment further includes a magnetic portion (or part) locatedat any one of the lower substrate 10 and a light-emitting device 100A,and a reaction portion (or part) located at the remaining one, ascompared to the first embodiment. Hereinafter, the difference from thefirst embodiment will be mainly discussed, and a description the same asthe first embodiment will be omitted.

The display device 1A according to the second embodiment includes thelower substrate 10 on which at least two lower wirings 11 are disposed,at least two light-emitting devices 100A each having the first electrode121 electrically connected to the lower wiring 11 and the light-emittingstructure 110 that generates light, and the magnetic portion located onany one of the light-emitting device 100A and the lower substrate 10,and the reaction portion located on the remaining one, so as to beattracted by the magnetic portion.

In the second embodiment, the positioning partition wall 12 of the firstembodiment is not provided. In the second embodiment, one light-emittingdevice 100A is self-aligned in one pixel region P by a magnetic forceacting between the magnetic portion and the reaction portion.

The metal bonding layer 13 is disposed on the lower wiring 11 in an areawhere the light-emitting device 100A is to be located, as in the firstembodiment.

The light-emitting device 100A of the second embodiment has nodistinction between the central region S1 and the peripheral region S2at a lower portion the light-emitting device 100A, as compared with thelight-emitting device 100 of the first embodiment. That is, the lowerportion of the light-emitting device 100A is formed flat.

In particular, referring to FIG. 12 , the light-emitting device 100A ofthe second embodiment includes the light-emitting structure 110, thefirst electrode 121, and the second electrode 122. The display device 1Aof the second embodiment further includes the upper wiring 20electrically connected to the second electrode 122 and the colorsubstrate 30 disposed on the light-emitting device 100A.

The light-emitting structure 110 includes the first conductivesemiconductor layer 111, the active layer 112 located on the firstconductive semiconductor layer 111, and the second conductivesemiconductor layer 113 located on the active layer 112.

The first electrode 121 is exposed to a lower portion of the firstconductive semiconductor layer 111, and the second electrode 122 isexposed to an upper portion of the second conductive semiconductor layer113.

The insulating layer 124 is also provided in the second embodiment. Theinsulating layer 124 is disposed to surround at least a side surface ofthe light-emitting structure 110.

The plurality of light-emitting devices 100A is aligned on the lowerwiring 11 of the lower substrate 10 by an attractive force between themagnetic portion and the reaction portion.

The magnetic portion is a material having a magnetic force. For example,the magnetic portion includes a magnet. The magnetic portion includes apermanent magnet or a temporary magnet. The magnetic portion is locatedat any one of the lower substrate 10 and the light-emitting device 100A.However, in case the magnetic portion is implemented as a magnet, themagnetic portion should be located on the lower substrate 10 since it isdifficult to place the magnet on the light-emitting device 100A.

Alignment positions of the light-emitting devices 100A on the lowersubstrate 10 are defined by these magnetic portions. The magneticportions are arranged on the lower substrate 10 corresponding to therespective pixel regions P. More specifically, the magnetic portions arearranged to vertically overlap a part of the lower wirings 11 verticallyoverlapping the respective pixel regions P.

The magnetic portion may be located beneath the lower wiring 11. Thatis, each of the magnetic portions may be located between the lowerwiring 11 and the lower substrate 10. In addition, the magnetic portionsmay be located inside the lower substrate 10, or located at a lowersurface of the lower substrate 10. For example, as illustrated in FIG.10 , the magnetic portion may include a first magnetic portion 14 buriedor embedded in the lower substrate 10.

When an area of the magnetic portion is too large, a plurality oflight-emitting devices 100A may be arranged in one pixel region P. Thus,each of the magnetic portions has a planar shape that corresponds to thefirst electrode 121. In detail, the magnetic portions have a circularplanar shape as illustrated in FIG. 11 . In addition, the area and widthof the magnetic portions are less than those of the first electrode 121.

Here, the metal bonding layer 13 is disposed to vertically overlap themagnetic portion. The magnetic portion vertically overlaps a middleportion of the metal bonding layer 13, but does not overlap edges of themetal bonding layer 13.

The reaction portion reacts with a magnetic force of the magneticportion, so that an attractive force is generated therebetween.

For example, the reaction portion includes a magnet so that anattractive force is acted on the magnetic portion. More specifically,the magnetic portion is a magnet having a first polarity, and thereaction portion is a magnet having a second polarity opposite to thefirst polarity.

As another example, the reaction portion includes a magnetic metal sothat an attractive force is acted on the magnetic portion. The magneticmetal is a metal that includes a magnetic body that is attracted by amagnetic force of the magnet. The magnetic metal includes aferromagnetic material. In detail, the reaction portion includes any oneelement of Ni, Cr, Mo, and Fe, or is an alloy of these elements.

The reaction portion is located at the remaining one of the lowersubstrate 10 and the light-emitting device 100A. As the reaction portionis made of a magnetic metal, the reaction portion may be, preferably,located at the light-emitting device 100A.

As the reaction portion is a conductor, it is configured to beelectrically connected to the first electrode 121 and/or the secondelectrode 122 during a growth process of the light-emitting device 100Aso as to prevent an electrical short circuit. More specifically, thereaction portion may be formed by a deposition method such as sputteringtogether with the first electrode 121 and/or the second electrode 122.

In particular, referring to FIG. 12 , the reaction portion isimplemented as a first magnetic electrode 131 located between the firstelectrode 121 and the first conductive semiconductor layer 111.Accordingly, the first magnetic electrode 131 is located beneath orbelow the first conductive semiconductor layer 111, and the firstelectrode 121 is located beneath the first magnetic electrode 131.

A bonding layer 134 may be provided between the first magnetic electrode131 and the first conductive semiconductor layer 111 to improve abinding (or coupling) force between the first magnetic electrode 131 andthe first conductive semiconductor layer 111. The bonding layer 134 isat least one element of Sn, Ag, Cu, Pb, Al, Bi, Cd, Fe, In, Ni, Sb, Zn,Co, and Au, or a compound of these elements. Further, the bonding layer134 and the first magnetic electrode 131 may be implemented as a singlelayer.

The first magnetic electrode 131 is an electrically conductive material,and includes a magnetic metal attracted by a magnetic force of themagnetic portion. The first magnetic electrode 131 includes any oneelement of Ni, Cr, Mo, and Fe, or an alloy of these elements.

FIG. 13 is a cross-sectional view of a display device according to athird embodiment of the present disclosure.

Referring to FIG. 13 , a display device 1B according to the thirdembodiment further includes a second magnetic portion 15 and a secondmagnetic electrode 132, as compared to the second embodiment.

The magnetic portion may include the first magnetic portion 14 and thesecond magnetic portion 15, or include only the second magnetic portion15 or only the first magnetic portion 14. In FIG. 13 , the magneticportion includes the first magnetic portion 14 and the second magneticportion 15.

When a magnetic force of the magnetic portion is weak, a possibility ofproper alignment of the light-emitting device 100A decreases, and thus aplurality of magnetic portions may be provided. That is, a plurality ofmagnetic portions is provided in one pixel region P.

The second magnetic portion 15 is located at the lower surface of thelower substrate 10. In detail, the second magnetic portion 15 isdisposed to vertically overlap the first magnetic portion 14, and has ashape and a size corresponding to a shape and a size of the firstmagnetic portion 14.

The reaction portion may include the first magnetic electrode 131 andthe second magnetic electrode 132, or include only the first magneticelectrode 131. In FIG. 13 , the reaction portion includes the firstmagnetic electrode 131 and the second magnetic electrode 132.

The second magnetic electrode 132 is electrically connected to thesecond electrode 122. The second magnetic electrode 132 is locatedbetween the second electrode 122 and the second conductive semiconductorlayer 113. The second magnetic electrode 132 is used to provide moremagnetic force when the magnetic force is insufficient with the firstmagnetic electrode 131 alone.

FIG. 14A is a cross-sectional view of a display device according to afourth embodiment of the present disclosure, and FIG. 14B is across-sectional view of a light-emitting device according to the fourthembodiment of the present disclosure.

A display device 1C according to the fourth embodiment has a differentshape to the display device 1A of the second embodiment.

In a light-emitting device 100C of the fourth embodiment, thelight-emitting structure 110 is divided into a central region S1 and aperipheral region S2, and the first electrode 121 and the first magneticelectrode 131 are located at the central region S1. The central regionS1 and the peripheral region S2 are the same as those described in thefirst embodiment.

Accordingly, a possibility of a plurality of light-emitting devices 100Clocated in one pixel region P is reduced.

FIG. 15A to 15C are views illustrating a method of fabricating thedisplay device according to the second embodiment of the presentdisclosure.

Referring to 15A, first, the lower substrate 10 having the lower wiring11 disposed thereon is prepared. The first magnetic portion 14 is formedon the lower substrate 10. The metal bonding layer 13 is disposed on thelower wiring 11 corresponding to the pixel region P.

Referring to FIGS. 15B and 15C, numerous light-emitting devices 100A arealigned with respective pixel regions P by a capillary force between themetal bonding layer 13 and the first electrode 121 of the light-emittingdevice 100A, and an attractive force between the first magnetic portion14 and the first magnetic electrode 131 of the light-emitting device100A. More specifically, the lower substrate 10 is put into a containerincluding a solution containing the numerous light-emitting devices100A, and vibration is applied thereto. Then, the light-emitting devices100A are aligned to the respective pixel regions P in the solution bythe magnetic force and the capillary force. Here, heat is applied tomelt the metal bonding layer 13. The melted boding layer 13 allows thefirst electrode 121 to be adhered onto the lower wiring 11.

At this time, the light-emitting device 100A is put into the solution ina state that the first electrode 121, the first magnetic electrode 131,and the light-emitting structure 110 are only formed. This is becausewhen the second electrode 122 is formed, a defect occurs, namely, thesecond electrode 122 and the lower wiring 11 are connected to eachother.

Then, the second electrode 122 is formed on the light-emitting device100A. A molding material is filled in an air gap between thelight-emitting devices 100A to be flattened. Thereafter, the upperwiring 20 and the color substrate 30 are disposed on the light-emittingdevice 100A.

Meanwhile, the present disclosure provides a structure for improvingaccuracy of transferring light-emitting devices by using the fabricationmethod according to FIGS. 9A to 9D. Hereinafter, for the sake ofconvenience, a description will be given that the magnetic portion isdisposed on the lower substrate and the reaction portion is disposed onthe light-emitting device.

FIG. 16 is a cross-sectional view of a display device according to thepresent disclosure, FIG. 17 is a cross-sectional view of a lower wiring,FIG. 18 is a cross-sectional view of a light-emitting device accordingto the present disclosure, and FIG. 19 is a bottom view of thelight-emitting device according to the present disclosure.

A display device according to the present disclosure may include a lowersubstrate 310, a lower electrode 320, a flat layer 340, a light-emittingdevice 350, a second electrode 352, a first electrode 356, a blackmatrix 391, a red color filter 380 a, a green color filter 380 b, amagnetic portion 321, and a reaction portion 356 a. Hereinafter, thesecomponents will be described in detail.

A description of the lower substrate 310 will be replaced by thedescription of the lower substrate in FIG. 3 , and a description of thelower electrode 320 will be replaced by the aforementioned descriptionof the lower wiring.

The magnetic portion 321 is formed on the lower substrate 310 andgenerates a magnetic field, thereby forming an attractive force orrepulsive force with a magnetic material. The magnetic portion 321 maybe made of a thin film magnet. The thin film magnet may be made of aferromagnetic material. For example, the thin film magnet may be made ofan Sm—Co alloy. An area of the thin film magnet may correspond to 10 to200% of an area of the semiconductor light-emitting device 350.

Here, when the thin film magnet is made of a ferromagnetic material, thethin film magnet may be magnetized in a constant direction. Themagnetization direction of the thin film magnet may be a directionperpendicular to the lower substrate 310. This may allow thelight-emitting device 350 to be aligned to a correct or proper positionwhen transferring the light-emitting device 350 onto the lower substrate310. Since the magnetization direction greatly affects transferaccuracy, the thin film magnet should be made of the ferromagneticmaterial that is not affected by an external magnetic field. The Sm—Coalloy may be magnetized in a direction perpendicular to the lowersubstrate 310, making it suitable to be used in the thin film magnet.

In one embodiment, based on the total weight of the thin film magnet,the thin film magnet may be made of an Sm—Co alloy composed of 34% of Smand 66% of Co by weight, or an Sm—Co alloy composed of 23% of Sm and 77%of Co by weight. Here, an error range of the alloy composition is within10%.

Meanwhile, a thickness of the thin film magnet may be 20 to 1000 nm.When the thickness of the thin film magnet is less than 20 nm, intensityof the magnetic field generated in the thin film magnet is insufficientto align the light-emitting device. In contrast, when the thickness ofthe thin film magnet exceeds 1000 nm, the resistivity (or specificresistance) of the circuit may be excessively increased due to the thinfilm magnet.

As illustrated in FIG. 17 , the lower electrode 320 may include aplurality of layers, and the magnetic portion 321 and the reactionportion 322 may be any one of the plurality of layers constituting thelower electrode 320.

Meanwhile, the reaction portion 356 a that forms an attractive forcewith the magnetic portion 321 may be disposed at the light-emittingdevice 350. As illustrated in FIG. 18 , the reaction portion 356 a maybe disposed between a first conductive electrode 356 b and a firstconductive semiconductor layer 355.

The reaction portion 356 a may be made of a magnetic material. Morespecifically, the reaction portion 356 a may be, preferably, aparamagnetic material. For transferring the light-emitting devices 350onto the lower substrate 310, a dispersion liquid of light-emittingdevice is applied onto the lower substrate 310. Here, when thelight-emitting device 350 is made of a ferromagnetic material, thelight-emitting devices 350 may aggregate with each other. The reactionportion 356 a may, preferably, react with a magnetic field generated inthe magnetic portion 321.

The reaction portion 356 a may be made of a ferromagnetic material and aparamagnetic material. For example, the reaction portion 356 a may bemade of any one of Ni, Fe, Mo, and Co, or an Ni-Mo—Fe alloy or anNi—Cr-Mo—Fe alloy. The Ni-Mo—Fe alloy and the Ni—Cr-Mo—Fe alloy havestrong corrosion resistance to acid, thereby preventing the reactionportion 356 a from being corroded by the acid used in a transfer processof the light-emitting devices 350.

Meanwhile, a thickness of the reaction portion 356 a may be 0.01 nm to 5μm. When the thickness of the reaction portion 356 a is less than 0.01nm, an attractive force between the reaction portion 356 a and themagnetic portion 321 may not be sufficient. In contrast, when thethickness of the reaction portion 356 a exceeds 5 μm, the resistivity ofthe circuit may be excessively increased due to the reaction portion 356a.

Meanwhile, each of the light-emitting devices 350 may include a firstelectrode electrically connected to the lower electrode 320 and having aplurality of layers, a first conductive semiconductor layer located onthe first electrode, an active layer located on the first conductivesemiconductor layer, and a second conductive semiconductor layer locatedon the active layer. The reaction portion 356 a may be any one of theplurality of layers constituting the first electrode.

In detail, the first electrode may include a first metal layer incontact with the first conductive semiconductor layer and a second metallayer in contact with the lower electrode 320. The reaction portion 356a may be disposed between the first metal layer and the second metallayer. As the reaction portion 356 a made of a paramagnetic materialincreases the resistivity of the circuit, the first and second metallayers should have a lower resistivity than the reaction portion 356 a.

Alternatively, the reaction portion 356 a may be made of a magneticallyconductive material, so that the reaction portion 356 a and the firstconductive electrode 356 b are formed as an integrated electrode,instead of being implemented as a separate layer formed on the firstconductive electrode 356 b.

As illustrated in FIG. 18 , areas of the reaction portion 356 a and thefirst conductivity electrode 356 b may be less (or smaller) than an areaof the first conductivity semiconductor layer 355. This is to improvetransfer accuracy of the semiconductor light-emitting devices 350 thatincludes the second electrode layer 352, the insulating layer 357, thesecond conductive semiconductor layer 353 and the active layer 354.

Meanwhile, the display device according to the present disclosureincludes the flat layer 340 covering the wiring substrate 310 and havinga plurality of holes 341. The flat layer 340 may be made of a lighttransmissive material.

Each of the holes 341 formed in the flat layer 340 may be provided at aposition corresponding to a region where the lower electrode 320 isformed. The hole 341 allows the lower electrode 320 to be exposed to theoutside before the light-emitting device 350 is being transferred.

When the light-emitting device 350 is transferred while only a portionof the lower electrode 320 is exposed to the outside, the light-emittingdevice 350 is selectively transferred onto the lower electrode 320 thatis exposed to the outside. As described above, the hole 341 serves toallow the light-emitting device 350 to be coupled to a specific positionin the transfer process.

The hole 341 may be formed in various shapes. A shape of thelight-emitting device 350 transferred on the lower electrode 320 may bechanged (or determined) according to the shape of the hole 341. Indetail, when the hole 341 has a circular shape, a circular-shapedlight-emitting device may be transferred onto the lower electrode 320.Or, when the hole 341 has a rectangular shape, a rectangular-shapedlight-emitting device may be transferred onto the lower electrode 320.

Meanwhile, the display device according to the present disclosure mayfurther include a metal bonding layer 360 that joins the light-emittingdevice 350 and the lower electrode 320 together. The metal bonding layer360 is the same as described above.

When the display device is configured as described above, a time takento transfer the light-emitting devices will be reduced. Hereinafter, amethod of fabricating the display device according to the presentdisclosure will be described.

FIGS. 20A to 20C are cross-sectional views illustrating a method offabricating the display device according to the present disclosure.

As illustrated in FIG. 20A, after forming the lower electrode 320 andthe metal bonding layer 360 on the wiring substrate 310, the flay layer340 is formed to cover the wiring substrate 310, the lower electrode320, and the metal bonding layer 360.

Then, a plurality of holes 341 is formed at positions corresponding tothe respective metal bonding layers 360 through hole processing.Accordingly, the metal bonding layer 360 is exposed to the outside.

Meanwhile, the lower electrode 320 includes the magnetic portion thatgenerates an electric force or a magnetic force, as aforementioned.

Then, as shown in FIG. 20B, a dispersion liquid of the light-emittingdevices 350 is applied onto the wiring substrate 310 coated with themetal bonding layer 360. When the dispersion liquid is applied, anattractive force is formed between the magnetic portion provided at thelower electrode 320 and the reaction portion provided at each of thelight-emitting devices 350. Accordingly, the light-emitting devices 350are inserted into the hole 341, and are then adhered to the metalbonding layer 360, as illustrated in FIG. 20C. Each of thelight-emitting devices 350 is electrically connected to the lowerelectrode 320 through the metal bonding layer 360.

When the light-emitting devices are transferred in this manner, it isnot necessary to individually pick and place the light-emitting devicesonto the electrode.

Meanwhile, as illustrated in FIG. 21 , when shapes of holes 341 a, 341 band 341 c are formed differently, a light-emitting device having aspecific shape may be attached or adhered to a specific position. Inmore detail, the plurality of holes may include a first hole 341 ahaving a first shape and a second hole 341 b having a different shapefrom the first shape, and a third hole 341 c having a different shapefrom the first shape and the second shape.

A first light-emitting device 350 a corresponding to the first shape maybe only disposed on the first hole 341 a, a second light-emitting device350 b corresponding to the second shape may be only disposed on thesecond hole 341 b, and a third light-emitting device 350 c correspondingto the third shape may be only disposed on the third hole 341 c. In caseholes are formed into three types of shapes, a dispersion liquid mixedof the three different types of light-emitting devices is applied,thereby allowing transfer of R, G, and B light-emitting devices to beperformed at once.

Although preferred embodiments have been depicted and described indetail herein, it will be apparent to those skilled in the relevant artthat various modifications, additions, substitutions and the like can bemade without departing from the spirit of the disclosure, and these are,therefore, considered to be within the scope of the disclosure, asdefined in the following claims.

What is claimed is:
 1. A display device, comprising: a substrate; asubstrate electrode disposed on the substrate; a magnetic portiondisposed and having a magnetic property on an upper surface of thesubstrate; a plurality of light-emitting devices respectively disposedon the magnetic portion; and a partition wall surrounding the magneticportion and a metal bonding layer, wherein each of the plurality oflight-emitting devices comprises a magnetic electrode forming anattractive force with the magnetic portion, wherein a top surface of thepartition wall is lower than that of the each of the plurality oflight-emitting devices, wherein the each of the plurality oflight-emitting devices comprises a central semiconductor region and aperipheral semiconductor region surrounding the central semiconductorregion, and wherein the central semiconductor region comprises a stepprotruding downward from the peripheral semiconductor region.
 2. Thedisplay device of claim 1, wherein the metal bonding layer is, disposedbetween the magnetic portion and the magnetic electrode.
 3. The displaydevice of claim 1, wherein the each of the plurality of light-emittingdevices further comprises: a first electrode electrically connected tothe substrate electrode and having a plurality of layers; a firstconductive type semiconductor layer disposed on the first electrode; anactive layer disposed on the first conductivity type semiconductorlayer; and a second conductivity type semiconductor layer disposed onthe active layer, and wherein the first electrode comprises the magneticelectrode.
 4. The display device of claim 1, wherein the magneticelectrode comprises any one of Ni, Fe, Mo, and Co, or an Ni-Mo—Fe alloyor an Ni—Cr-Mo—Fe alloy.
 5. The display device of claim 1, wherein themagnetic portion comprises an Sm—Co alloy.
 6. The display device ofclaim 1, wherein the partition wall comprises a positioning hole and asize of the positioning hole is greater than that of lower portion ofthe each of plurality of light-emitting devices, and is less than thatof upper portion of the each of plurality of light-emitting devices. 7.The display device of claim 1, wherein a thickness of the metal bondinglayer is greater than that of the magnetic portion.
 8. The displaydevice of claim 1, wherein a top surface of the metal bonding layer islower than that of the partition wall.
 9. A display device, comprising:a substrate; a substrate electrode disposed on the substrate; a magneticportion disposed and having a magnetic property on an upper surface ofthe substrate; a plurality of light-emitting devices respectivelydisposed on the magnetic portion; and a second magnetic portion disposedunder the substrate, wherein each of the plurality of light-emittingdevices comprises a magnetic electrode forming an attractive force withthe magnetic portion.
 10. A display device, comprising: a substrate; asubstrate electrode disposed on the substrate; a magnetic portion havinga magnetic property on the substrate; a plurality of light-emittingdevices respectively disposed on the magnetic portion; and a partitionwall surrounding the magnetic portion, wherein each of the plurality oflight-emitting devices comprises a magnetic electrode forming anattractive force with the magnetic portion, wherein the partition wallcomprises a positioning hole, and wherein a size of the positioning holeis greater than that of a lower portion of the each of plurality oflight-emitting devices, and is less than that of an upper portion of theeach of plurality of light-emitting devices.
 11. The display device ofclaim 10, further comprising a metal bonding layer disposed between themagnetic portion and the magnetic electrode.
 12. The display device ofclaim 11, wherein the partition wall surrounds the magnetic portion andthe metal bonding layer.
 13. The display device of claim 10, wherein theeach of the plurality of light-emitting devices comprises: a firstelectrode electrically connected to the substrate electrode and having aplurality of layers; a first conductive type semiconductor layerdisposed on the first electrode; an active layer disposed on the firstconductivity type semiconductor layer; and a second conductivity typesemiconductor layer disposed on the active layer, and wherein the firstelectrode comprises the magnetic electrode.
 14. The display device ofclaim 10, wherein the magnetic electrode comprises any one of Ni, Fe,Mo, and Co, or an Ni-Mo—Fe alloy or an Ni—Cr-Mo—Fe alloy.
 15. Thedisplay device of claim 10, wherein the magnetic portion comprises anSm—Co alloy.
 16. The display device of claim 10, further comprising asecond magnetic portion disposed under the substrate.
 17. The displaydevice of claim 11, wherein a thickness of the metal bonding ager isgreater than that of the magnetic portion.
 18. The display device ofclaim 11, wherein a top surface of the metal bonding layer is lower thanthat of the partition wall.